New Delhi: Researchers at Intel Corporation have built the world's smallest SRAM (Static Random Access Memory) memory cell, measuring only one square micron.

These cells, the building blocks of memory chips, were built as part of fully functional SRAM devices manufactured using Intel's next-generation 90-nanometer (nm) process technology. The achievement is a milestone toward implementing the new process for production in 2003.

"Intel's one-square-micron SRAM cell has established a new density benchmark for silicon technology," said Sunlin Chou, senior vice president and general manager of Intel's Technology and Manufacturing Group.

With the 90nm process technology, Intel is on a fast pace to extend its record of introducing a new process generation every two years. The company will build many of its products on this process, including processors, chipsets and communications products. Intel plans to use the 90 nm technology exclusively on 300mm wafers.